Ordering number : ENN7910 2SK3101LS 2SK3101LS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Low Qg. • Ultrahigh-Speed Switching Applications. • Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current.
• Low ON-resistance.
• Low Qg.
• Ultrahigh-Speed Switching Applications.
• Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature Storage Temperature Avalanche Enargy (Single Pulse)
*1 Avalanche Current
*2
*1 VDD=50V, L=1mH, IAV=11A
*2 L≤1mH, single pulse
Symbol VDSS VGSS
ID IDP
PD
Tch Tstg EAS IAV
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Parameter
Drain-to-Source Breakdown Volt.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK310 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK310 |
Hitachi Semiconductor |
(2SK310 / 2SK311) SILICON N-CHANNEL MOS FET | |
3 | 2SK3102-01R |
Fuji Semiconductors |
MOSFET / Power MOSFETs | |
4 | 2SK3105 |
NEC |
N-Channel MOSFET | |
5 | 2SK3107 |
NEC |
N-Channel MOSFET | |
6 | 2SK3107C |
Renesas |
N-CHANNEL MOSFET | |
7 | 2SK3108 |
NEC |
N-Channel MOSFET | |
8 | 2SK3109 |
NEC |
N-Channel MOSFET | |
9 | 2SK3109-AZ |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK311 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK311 |
Hitachi Semiconductor |
(2SK310 / 2SK311) SILICON N-CHANNEL MOS FET | |
12 | 2SK3110 |
NEC |
N-Channel MOSFET |