The 2SK3105 is a switching device which can be driven directly by a 4 V power source. The 2SK3105 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit : mm) 0.4 +0.1 –0.05 0.16+0.1 –0.06 0.65–0.15 +0.1 2.8 ±0.2 3 1.5 0 to 0.
a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.4 +0.1
–0.05 0.16+0.1
–0.06
0.65
–0.15
+0.1
2.8 ±0.2
3
1.5
0 to 0.1
1 2
FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance RDS(on)1 = 95 mΩ MAX. (VGS = 10 V, ID = 1.5 A) RDS(on)2 = 135 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A) RDS(on)3 = 150 mΩ MAX. (VGS = 4.0 V, ID = 1.5 A)
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 ±0.2 1 : Gate 2 : Source 3 : Drain
ORDERING INFORMATION
PART NUMBER 2SK3105 PACKAG.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK310 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK310 |
Hitachi Semiconductor |
(2SK310 / 2SK311) SILICON N-CHANNEL MOS FET | |
3 | 2SK3101LS |
Sanyo |
N-Channel Silicon MOSFET | |
4 | 2SK3102-01R |
Fuji Semiconductors |
MOSFET / Power MOSFETs | |
5 | 2SK3107 |
NEC |
N-Channel MOSFET | |
6 | 2SK3107C |
Renesas |
N-CHANNEL MOSFET | |
7 | 2SK3108 |
NEC |
N-Channel MOSFET | |
8 | 2SK3109 |
NEC |
N-Channel MOSFET | |
9 | 2SK3109-AZ |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK311 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK311 |
Hitachi Semiconductor |
(2SK310 / 2SK311) SILICON N-CHANNEL MOS FET | |
12 | 2SK3110 |
NEC |
N-Channel MOSFET |