The 2SK3108 is N channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. ORDERING INFORMATION PART NUMBER 2SK3108 PACKAGE Isolated TO-220 FEATURES •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 4.0 .
a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter.
ORDERING INFORMATION
PART NUMBER 2SK3108 PACKAGE Isolated TO-220
FEATURES
•Gate voltage rating ±30 V
•Low on-state resistance RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 4.0 A)
•Low input capacitance Ciss = 400 pF TYP. (VDS = 10 V, VGS = 0 V)
•Avalanche capability rated
•Built-in gate protection diode
•Isolated TO-220 package
ABSOLUTE MAXIMUM RATING (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current(DC) (TC = 25°C) Dr.
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