The 2SK3107 is a switching device which can be driven directly by a 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for 1.6 ± 0.1 PACKAGE DRAWING (Unit : mm) 0.3 ± 0.05 0.1 +0.1 –0.05 0.8 ± 0.1 use as a high-speed switching device in digital circuits. D 0 to 0.1 G S 0.2 0.5 +0.1 –0 FEATURES • Can be driven by a 2.
• Can be driven by a 2.5-V power source
• Low gate cut-off voltage
0.5
0.6 0.75 ± 0.05
1.0 1.6 ± 0.1
ORDERING INFORMATION
PART NUMBER 2SK3107 PACKAGE SC-75(USM)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) 5
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
30 ±20 ±0.1 ±0.4 200 150
–55 to +150
V V A A mW °C °C
EQUIVALENT CIRCUIT
Drain
Gate
Body Diode
Total Power Dissipation Channel Temperature Storage Temperature
Gate Protection Diode Marking: D1
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mount.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK310 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
2 | 2SK310 |
Hitachi Semiconductor |
(2SK310 / 2SK311) SILICON N-CHANNEL MOS FET | |
3 | 2SK3101LS |
Sanyo |
N-Channel Silicon MOSFET | |
4 | 2SK3102-01R |
Fuji Semiconductors |
MOSFET / Power MOSFETs | |
5 | 2SK3105 |
NEC |
N-Channel MOSFET | |
6 | 2SK3107C |
Renesas |
N-CHANNEL MOSFET | |
7 | 2SK3108 |
NEC |
N-Channel MOSFET | |
8 | 2SK3109 |
NEC |
N-Channel MOSFET | |
9 | 2SK3109-AZ |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK311 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK311 |
Hitachi Semiconductor |
(2SK310 / 2SK311) SILICON N-CHANNEL MOS FET | |
12 | 2SK3110 |
NEC |
N-Channel MOSFET |