2SK2926 - Hitachi Semiconductor

2SK2926 Silicon N Channel MOS FET

2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-535 1st. Edition Features • Low on-resistance R DS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to so.

Features

• Low on-resistance R DS(on) = 0.042Ω typ.
• 4V gate drive devices.
• High speed switching Outline DPAK
  –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Ta = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)
* I DR I AP
* 3 3 2 1.