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2SK2926 |
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| Part Number | 2SK2926 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-535 1st. Edition Features • Low on-resistance R DS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switchin... |
| Features |
• Low on-resistance R DS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Ta = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1... |
| Document |
 2SK2926 Data Sheet
PDF 53.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2920 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |
|
| 2 | 2SK2922 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 3 | 2SK2925 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK2925 |
Renesas |
Silicon N-Channel MOSFET |
|
| 5 | 2SK2925L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|