2SK2920 - Toshiba Semiconductor

2SK2920 Silicon N-Channel MOS Type Field Effect Transistor

2SK2920 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) 2SK2920 Chopper Regulator, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V) z Enhanceme.

Features

0 200 ±20 5 20 20 65 5 2 150 −55 to 150 V V V A A W mJ A mJ °C °C 2.3 ± 0.15 2.3 ± 0.15 1. GATE 2. DRAIN （HEAT SINK） 3. SOURSE 2 1 3 JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the.