2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 0.060 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1039-0500 (Previous: ADE-208-454B) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code:.
• Low on-resistance RDS = 0.060 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1039-0500 (Previous: ADE-208-454B)
Rev.5.00 Sep 07, 2005
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S))
4
D
G 12 3
1
23
S
1. Gate 2. Drain 3. Source 4. Drain
Rev.5.00 Sep 07, 2005 page 1 of 8
2SK2925(L),2SK2925(S)
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current.
2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549C (Z) 4th. Edition Jun 1998 Featu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2925 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2925 |
Renesas |
Silicon N-Channel MOSFET | |
3 | 2SK2925S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2925S |
Guangdong Kexin Industrial |
N-Channel Silicon MOSFET | |
5 | 2SK2925S |
Renesas |
Silicon N-Channel MOSFET | |
6 | 2SK2920 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor | |
7 | 2SK2922 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
8 | 2SK2926 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
9 | 2SK2926L |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
10 | 2SK2926S |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
11 | 2SK2927 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK2927 |
INCHANGE |
N-Channel MOSFET |