2SK2925 - Renesas

2SK2925 Silicon N-Channel MOSFET

2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 0.060 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1039-0500 (Previous: ADE-208-454B) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code:.

Features

• Low on-resistance RDS = 0.060 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source Outline REJ03G1039-0500 (Previous: ADE-208-454B) Rev.5.00 Sep 07, 2005 RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 D G 12 3 1 23 S 1. Gate 2. Drain 3. Source 4. Drain Rev.5.00 Sep 07, 2005 page 1 of 8 2SK2925(L),2SK2925(S) Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current.