2SK2927 - Hitachi Semiconductor

2SK2927 Silicon N-Channel MOSFET

2SK2927 Silicon N Channel MOS FET High Speed Power Switching ADE-208-550D (Z) 5th. Edition Jun 1998 Features • Low on-resistance R DS =0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2927 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source .

Features

• Low on-resistance R DS =0.055 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source Outline TO
  –220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2927 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 10 40 10 10 8.5 30 150
  –55 to +150 Unit V V A A A A mJ W °C °C .