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2SK2925 |
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| Part Number | 2SK2925 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate driv... |
| Features |
• Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK –2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 10 40 10 10 8.5 20 150 –55 to +150 Un... |
| Document |
 2SK2925 Data Sheet
PDF 53.82KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2920 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |
|
| 2 | 2SK2922 |
Hitachi Semiconductor |
Silicon N Channel MOS FET |
|
| 3 | 2SK2925 |
Renesas |
Silicon N-Channel MOSFET |
|
| 4 | 2SK2925L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|
| 5 | 2SK2925L |
Renesas |
Silicon N-Channel MOSFET |
|