2SK2828 - Hitachi Semiconductor

2SK2828 Silicon N-Channel MOSFET

2SK2828 Silicon N Channel MOS FET High Speed Power Switching ADE-208-514 C (Z) 4th. Edition Feb 1999 Features • • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC–DC converter Avalanche ratings Outline TO–3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2828 A.

Features

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• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC
  –DC converter Avalanche ratings Outline TO
  –3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK2828 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1 Ratings 700 ±30.