2SK2804 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±5 ± 20 35 (Tc = 25ºC) 90 5 150 –55 to +150 (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (on) Ciss Coss Crss t d (on) tr t d (off) tf VSD 2.0 2.6 3.7 1.1 580 12.
0
TC =
–55ºC 25ºC 125ºC
RDS (ON) (Ω)
6 8
1.0
I D (A)
I D (A)
0.5
VGS = 4.5V 0 5 10 15 20
1 0 0 0 1 2 3 4 5
0
2
4
VDS (V)
VGS (V)
I D (A)
I D — Re (yfs) Characteristics
10 5 TC =
–55ºC 25ºC 125ºC 10 VDS = 20V 8 6
VGS — VDS Characteristics
3.0 2.5
TC — RDS (ON) Characteristics
ID = 2.5A VGS = 10V
VDS (V)
ID = 5A
RDS (ON) (Ω)
20
Re (yfs) (S)
2.0 1.5 1.0 0.5 0
1 0.5
4 ID = 2.5A 2 0
0.2 0.05 0.1
0.5
1
5
4
5
10
–50
0
50
100
150
I D (A)
VGS (V)
Tc (ºC)
VDS — Capacitance Characteristics
2000 1000 VGS = 0V f = 1MHz Ciss 5 4 3
VSD — I DR Characteristics
30
Safe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2800 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
2 | 2SK2802 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
3 | 2SK2803 |
Sanken electric |
MOSFET | |
4 | 2SK2803 |
INCHANGE |
N-Channel MOSFET | |
5 | 2SK2805 |
Sanken electric |
MOSFET | |
6 | 2SK2806 |
Fuji Electric |
N-channel MOS-FET | |
7 | 2SK2806-01 |
Fuji Electric |
N-channel MOS-FET | |
8 | 2SK2807-01L |
Fuji Electric |
N-channel MOS-FET | |
9 | 2SK2807-01S |
Fuji Electric |
N-channel MOS-FET | |
10 | 2SK2808 |
Fuji Electric |
N-channel MOS-FET | |
11 | 2SK2808-01MR |
Fuji Electric |
N-channel MOS-FET | |
12 | 2SK2809 |
Fuji Electric |
N-channel MOS-FET |