This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A) • Low Ciss : Ciss = 7200 pF (TYP.) • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to.
• Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A)
• Low Ciss : Ciss = 7200 pF (TYP.)
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg
60 ±20 +20,
–10 ±70 ±280 100 1.5 150
–55 to + 150 70 490
V V V A A W W °C °C A mJ
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2826-ZJ |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
2 | 2SK2826 |
NEC |
SWITCHING N-CHANNEL POWER MOSFET | |
3 | 2SK2823 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2824 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2825 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2827-01 |
Fuji Electric |
Power MOSFET | |
7 | 2SK2828 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK2800 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
9 | 2SK2802 |
Hitachi Semiconductor |
Silicon N Channel MOS FET | |
10 | 2SK2803 |
Sanken electric |
MOSFET | |
11 | 2SK2803 |
INCHANGE |
N-Channel MOSFET | |
12 | 2SK2804 |
Sanken electric |
MOSFET |