2SK2802 - Hitachi Semiconductor

2SK2802 Silicon N Channel MOS FET

2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2802 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source vol.

Features

• Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 100 mA)
• 2.5V gate drive devices.
• Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2802 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1 % Symbol VDSS VGSS ID I D(pulse) Pch Tch Tstg Note1 Note2 Ratings 30 ±10 0.5 1.0 150 150
  –55 to +150 Unit V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown .