2SK2824 - Toshiba Semiconductor

2SK2824 Silicon N-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2824 For Portable Equipment High Speed Switch Applications Analog Switch Applications • High input impedance • 1.5 V gate drive • Low gate threshold voltage: Vth = 0.5~1.0 V • Small package Marking Equivalent Circuit 2SK2824 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain.

Features

propriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. 1 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance 1 Drain-source ON resistance 2 Drain-source ON r.