2SK2826-ZJ - NEC

2SK2826-ZJ SWITCHING N-CHANNEL POWER MOSFET

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A) • Low Ciss : Ciss = 7200 pF (TYP.) • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to.

Features

• Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A)
• Low Ciss : Ciss = 7200 pF (TYP.)
• Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 60 ±20 +20,
  –10 ±70 ±280 100 1.5 150
  –55 to + 150 70 490 V V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25.