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2SK2315 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 21 3 4 D G .
• Low on-resistance
• High speed switching
• Low drive current
• 2.5 V gate drive device can be driven from 3 V source.
• Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R )
21 3
4
D G
REJ03G1006-0200 (Previous: ADE-208-1354)
Rev.2.00 Sep.07,2005
1. Gate 2. Drain 3. Source 4. Drain
Note: Marking is “TY”
S
*UPAK is a trademark of Renesas Technology Corp.
Rev.2.00 Sep. 07, 2005 page 1 of 5
2SK2315
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Dra.
2SK2315 - Hitachi Semiconductor
2SK2315 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High spe.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2311 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | 2SK2312 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 3 | 2SK2313 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | 2SK2313 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | 2SK2314 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 6 | 2SK2316 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 7 | 2SK2317 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 8 | 2SK2318 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 9 | 2SK2320 |
Toshiba |
N-Channel MOSFET |
|
| 10 | 2SK2324 |
Panasonic |
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|
| 11 | 2SK2326 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | 2SK2328 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |
|