2SK2316 - Sanyo Semicon Device

2SK2316 N-Channel Silicon MOSFET

Ordering number : EN5300A N-Channel Silicon MOSFET 2SK2316 Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive (2.5V drive). Package Dimensions unit: mm 2062A-PCP [2SK2316] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cu.

Features

• Low ON resistance.
• Ultrahigh-speed switching.
• Low-voltage drive (2.5V drive). Package Dimensions unit: mm 2062A-PCP [2SK2316] Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol VDSS VGSS ID IDP PD Conditions Ratings 20 ±10 2 8 1.5 3.5 150
  –55 to +150 1 : Gate 2 : Drain 3 : Source SANYO: PCP (Bottom View) PW≤10µd, duty cycle≤1% Mounted on ceramic board (250mm2×0.8mm) Tc=25°C Unit V V A A W W °C °C Channel Temperature Storage Temperature Tch Tstg Elec.