2SK2328 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK2328 Absolute Maximum Ratings (Ta = 25°C) Item Drain to sourc.
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•
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• Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Source
S
2SK2328
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg
2 1
Ratings 650 ±30 7 28 7 75 150
–55 to +1.
·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2320 |
Toshiba |
N-Channel MOSFET | |
2 | 2SK2324 |
Panasonic |
Silicon N-Channel Power F-MOS | |
3 | 2SK2326 |
INCHANGE |
N-Channel MOSFET | |
4 | 2SK2329 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK2329L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2329S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK2311 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK2312 |
Toshiba Semiconductor |
N-Channel MOSFET | |
9 | 2SK2313 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
10 | 2SK2313 |
INCHANGE |
N-Channel MOSFET | |
11 | 2SK2314 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK2315 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |