Ordering number:ENN5058 Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. N-Channel Silicon MOSFET 2SK2317 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B 6.5 5.0 4 [2SK2317] 2.3 0.5 5.5 1.5 7.0 0.85 0.7 1.2 0.8 1.6 7.5 0.6 12 3 0.5 unit:mm 2092B 2.3 6.5 5.0 4 2.3 [2SK2317] 2.3 0.5 1 : Gate 2 :.
· Low ON resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
N-Channel Silicon MOSFET
2SK2317
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm
2083B
6.5 5.0
4
[2SK2317]
2.3 0.5
5.5 1.5 7.0
0.85 0.7
1.2
0.8 1.6 7.5
0.6 12 3
0.5
unit:mm 2092B
2.3
6.5
5.0 4
2.3
[2SK2317]
2.3
0.5
1 : Gate 2 : Drain 3 : Source SANYO : TP
0.8 5.5 1.5
2.5 7.0 1.2
0.85 1
0.6
2
3
0.5
1.2 0 to 0.2
2.3 2.3
1 : Gate 2 : Drain 3 : Source SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require ex.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2311 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK2312 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK2313 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2313 |
INCHANGE |
N-Channel MOSFET | |
5 | 2SK2314 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2315 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK2315 |
Renesas |
Silicon N-Channel MOSFET | |
8 | 2SK2316 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
9 | 2SK2318 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
10 | 2SK2320 |
Toshiba |
N-Channel MOSFET | |
11 | 2SK2324 |
Panasonic |
Silicon N-Channel Power F-MOS | |
12 | 2SK2326 |
INCHANGE |
N-Channel MOSFET |