Power F-MOS FETs 2SK758 2SK2324(Tentative) Silicon N-Channel Power F-MOS s Features q Avalanche Unit : mm 4.6±0.2 ø3.2±0.1 9.9±0.3 2.9±0.2 energy capability guaranteed switching q High-speed q Low q No ON-resistance 15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 secondary breakdown s Applications q Non-contact q Solenoid q Motor relay 13.7 -0.2 +0.5 .
q Avalanche Unit : mm
4.6±0.2 ø3.2±0.1 9.9±0.3 2.9±0.2
energy capability guaranteed switching
q High-speed q Low q No
ON-resistance
15.0±0.3 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2
secondary breakdown
s Applications
q Non-contact q Solenoid q Motor
relay
13.7 -0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.1
drive
drive equipment mode regulator
7˚
q Control
q Switching
1 2 3
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current DC Pulse TC= 25˚C Ta= 25˚C Symbol VDSS VGSS ID IDP EAS
* PD Tch Tstg Rating.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2320 |
Toshiba |
N-Channel MOSFET | |
2 | 2SK2326 |
INCHANGE |
N-Channel MOSFET | |
3 | 2SK2328 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK2328 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK2329 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
6 | 2SK2329L |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK2329S |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
8 | 2SK2311 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2SK2312 |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK2313 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK2313 |
INCHANGE |
N-Channel MOSFET | |
12 | 2SK2314 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |