2SK2311 - Toshiba Semiconductor

2SK2311 Silicon N-Channel MOSFET

2SK2311 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2311 Chopper Regulator, DC−DC Converter and Switching Regulator Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) z High forward transfer admittance : |Yfs| = 16 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = .

Features

igh temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.5 g (typ.) Thermal C.