2SK2299 - Inchange Semiconductor

2SK2299 N-Channel MOSFET Transistor

·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage ±30 V ID Dr.

Features

Reverse Transfer Capacitance Coss Output Capacitance tr Rise Time td(on) Turn-on Delay Time tf Fall Time td(off) Turn-off Delay Time CONDITIONS VGS= 0; ID= 10mA VDS= 10V; ID=1mA VGS= 10V; ID= 4A VGS= ±30V;VDS= 0 VDS= 450V; VGS= 0 VDS=10V; VGS=0V; fT=1MHz VGS=10V; RGS=10Ω ID=4A; VDD=150V; RL=37.5Ω MIN TYP MAX UNIT E 450 V 2.0 4.0 V 0.85 1.1 Ω ± 100 nA 100 µA 870 40 pF 180 18 15 ns 35 60 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a gui.