2SK2291 - Inchange Semiconductor

2SK2291 N-Channel MOSFET Transistor

·Drain Current ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching Regulators ·DC-DC Converter, ·Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gat.

Features

) Drain-Source On-Resistance VGS= 10V; ID= 22.5A IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=10V; VGS=0V; fT=1MHz ton Turn-on Time toff Turn-off Time VGS=10V;ID=22.5A; RL=1.33Ω MIN TYPE MAX UNIT 60 V 1.0 2.0 V 1.5 V 0.018 0.02 Ω ±10 µA 100 µA 3800 700 pF 1530 240 490 ns 985 2000 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information containe.