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Transistors www.DataSheet4U.com Switching (800V, 3A) 2SK2294 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (.
1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 102 Transistors www.DataSheet4U.com 2SK2294 FElectrical characteristics (Ta = 25_C) FElectrical characteristic curves 103 Transistors www.DataSheet4U.com 2SK2294 104 Transistors www.DataSheet4U.com 2SK2294 FSwitching characteristics Fmeasurement circuit 105 .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK2290 |
Shindengen |
Power MOSFET |
|
| 2 | 2SK2291 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK2292-01L |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | 2SK2292-01S |
Fuji Electric |
N-channel MOS-FET |
|
| 5 | 2SK2299 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 6 | 2SK2299N |
Rohm |
Switching Transistor |
|
| 7 | 2SK2200 |
Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor |
|
| 8 | 2SK2201 |
Toshiba Semiconductor |
Silicon N-Channel MOS Type Field Effect Transistor |
|
| 9 | 2SK2202 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 10 | 2SK2203 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET |
|
| 11 | 2SK2207 |
Sanken electric |
MOSFET |
|
| 12 | 2SK2208 |
Sanken electric |
MOSFET |
|