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2SK217 |
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| Part Number | 2SK217 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK217 Silicon N-Channel Junction FET Application VHF amplifier Outline MPAK 3 1 2 1. Gate 2. Drain 3. Source 2SK217 Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain current Drain current ... |
| Features |
r Dissipation Curve Channel Power Dissipation Pch (mW) 150 Typical Output Characteristics (1) 10 VGS = 0 Drain Current ID (mA) 8 –0.2 V 6 –0.4 4 –0.6 2 –0.8 –1.0 P ch = 0 15 100 W m 50 0 50 100 150 Ambient Temperature Ta (°C) 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Typical Output Characteristics (2) 10 VGS = 0 Drain Current ID (mA) Drain Current ID (mA) 8 –0.2 V 6 –0.4 4 –0.6 2 –0.8 –1.0 1 2 3 4 Drain to Source Voltage VDS (V) 5 15 Typical Transfer Characteristics 10 VDS = 5 V 5 E D C 0 –3 0 –2 –1 Gate to Source Voltage VGS (V) 0 3 2SK217 Forward Transfer Admittance vs... |
| Document |
 2SK217 Data Sheet
PDF 36.26KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK210 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK2100-01MR |
Fuji Electric |
Power MOSFET |
|
| 3 | 2SK2101-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | 2SK2103 |
Rohm |
Small switching Transistors |
|
| 5 | 2SK2108 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|