DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching motors and DC/DC converters. characteristics and is ideal f.
• Low ON resistance RDS(on) = 0.6 Ω MAX. @VGS = 4.0 V, ID = 0.5 A
• High switching speed ton + toff < 100 ns
• Low parasitic capacitance
0.42 0.47 ±0.06 1.5 ±0.06 3.0
0.41+0.03
–0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G) Gate protection diode Source (S) Marking: NU
Internal diode PIN CONNECTIONS S: Source D: Drain G: Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL VDSS VGSS ID(DC) ID(pulse) PW ≤ 10 ms, Duty cycle ≤ 50 % 16 cm2 × 0.7 mm, ceramic substrate used VGS = 0 VDS = 0 TEST CONDITION.
SMD Type MOS Field Effect Transistor 2SK2111 MOSFICET Features Low on-resistance RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A Hi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK211 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK211 |
Xiao sheng Elctronic |
N-channel MOSFET | |
3 | 2SK2110 |
NEC |
N-Channel MOSFET | |
4 | 2SK2111-HF |
Kexin |
N-Channel MOSFET | |
5 | 2SK2112 |
NEC |
N-Channel MOSFET | |
6 | 2SK2114 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK2114 |
Renesas |
Silicon N-Channel MOSFET | |
8 | 2SK2114 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
9 | 2SK2115 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK2115 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
11 | 2SK2116 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
12 | 2SK2116 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |