The UTC 2SK209 is an N-channel junction silicon FET, it uses UTC’s advanced technology to provide the customers with low IGSS and low CRSS. The UTC 2SK209 is suitable for audio frequency low noise amplifier, impedance conversion, infrared sensor applications. FEATURES * High breakdown voltage: VGDS= −50V * High input impedance: IGSS= −1nA (max) at VGS= −3.
* High breakdown voltage: VGDS= −50V
* High input impedance: IGSS= −1nA (max) at VGS= −30V
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
2SK209L-xx-AE3-R
2SK209G-xx-AE3-R
Note: Pin Assignment: S: Source D: Drain G: Gate
Package SOT-23
Pin Assignment
1
2
3
S
D
G
Packing Tape Reel
2SK209G-xx-AE3-R
(1)Packing Type (2)Package Type (3)Rank (4)Green Package
(1) R: Tape Reel (2) AE3: SOT-23 (3) xx: refer to Classification of IDSS (4) G: Halogen Free and Lead Free, L: Lead Free
MARKING
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK2000-R |
Fuji Electric |
Power MOSFET | |
2 | 2SK2002-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
3 | 2SK2002-01MR |
Fuji Electric |
N-channel MOS-FET | |
4 | 2SK2003-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK2003-01MR |
Fuji Electric |
N-channel MOS-FET | |
6 | 2SK2004-01L |
Fuji Electric |
N-channel MOS-FET | |
7 | 2SK2004-01S |
Fuji Electric |
N-channel MOS-FET | |
8 | 2SK2007 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
9 | 2SK2008 |
Hitachi Semiconductor |
Silicon N-Channel MOS FET | |
10 | 2SK2009 |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | 2SK2010 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
12 | 2SK2010 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |