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2SK2009 |
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| Part Number | 2SK2009 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2009 High Speed Switching Applications Analog Switch Applications • High input impedance. • Low gate threshold voltage: Vth = 0.5 to 1.5 ... |
| Features |
f the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device. Please handle with caution.
Start of commercial production
1992-04
1
2014-03-01
2SK2009
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage curre... |
| Document |
 2SK2009 Data Sheet
PDF 273.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2000-R |
Fuji Electric |
Power MOSFET |
|
| 2 | 2SK2002-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK2002-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | 2SK2003-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK2003-01MR |
Fuji Electric |
N-channel MOS-FET |
|