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2SK2003-01M |
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| Part Number | 2SK2003-01M |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switchin... |
| Features |
(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
600
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
2.5
3.5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 2A
2.0
2.4
Ω
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
±100 nA
IDSS
Zero Gate Voltage Drain Current
VDS=600V; VGS= 0
500
µA
Ciss Input capacitance
1000 1500
Crss Reverse transfer capacitance
VDS=25V;VGS=0V;fT=1MHz
20
30
pF
Coss Output capacitance
85
130
tr
Rise time
td(on) Turn-on delay time
tf
Fall time
VGS=10V;ID=4A; VDD=300V; RL=10Ω
15
25
20
30
ns
15
25
td(off) Turn-off delay... |
| Document |
 2SK2003-01M Data Sheet
PDF 212.77KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK2003-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 2 | 2SK2000-R |
Fuji Electric |
Power MOSFET |
|
| 3 | 2SK2002-01M |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 4 | 2SK2002-01MR |
Fuji Electric |
N-channel MOS-FET |
|
| 5 | 2SK2004-01L |
Fuji Electric |
N-channel MOS-FET |
|