Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Ordering number:EN4500 N-Channel Silicon MOSFET 2SK1848 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1848] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol D.
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
Package Dimensions
unit:mm 2091A
[2SK1848]
0.4 3
0.16
0 to 0.1
0.5 1.5 0.5 2.5
1 0.95 0.95 2 1.9 2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
VDSS VGSS
ID IDP PD Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions PW≤10µs, duty cycle≤1%
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Votlage Drain Current Gate-to-.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK184 |
Toshiba Semiconductor |
N-Channel Silicon MOSFET |
|
| 2 | 2SK1840 |
Sanyo Semicon Device |
N-Channel Enhancement Silicon MOSFET |
|
| 3 | 2SK1841 |
Sanyo Semicon Device |
N-Channel Enhancement Silicon MOSFET |
|
| 4 | 2SK1842 |
Panasonic Semiconductor |
Silicon N-Channel Junction FET |
|
| 5 | 2SK1846 |
Panasonic |
Silicon N-Channel Power F-MOS FET |
|
| 6 | 2SK1847 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 7 | 2SK1849 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |
|
| 8 | 2SK18 |
Toshiba |
Silicon N-Channel Transistor |
|
| 9 | 2SK180 |
Yoshino International |
Power FET |
|
| 10 | 2SK1803 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 11 | 2SK1803 |
Panasonic |
Silicon N-Channel MOSFET |
|
| 12 | 2SK1805 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|