2SK184 - Toshiba Semiconductor

2SK184 N-Channel Silicon MOSFET

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 2SK184 Low Noise Audio Amplifier Applications Unit: mm · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakdown voltage: VGDS = −50 V · Low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ) · High input impedance: IGSS = −1 nA (max) (VGS = −30 V.

Features

VDS = 10 V, VGS = 0 VGS (OFF) ïYfsï Ciss VDS = 10 V, ID = 0.1 mA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz Crss NF (1) VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, RG = 1 kW, ID = 0.5 mA, f = 10 Hz NF (2) VDS = 10 V, RG = 1 kW, ID = 0.5 mA, f = 1 kHz Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14.0 mA Min Typ. Max Unit ¾ ¾ -1.0 nA -50 ¾ ¾ V 1.2 ¾ 14.0 mA -0.2 ¾ -1.5 V 4.0 15 ¾ mS ¾ 13 ¾ pF ¾ 3 ¾ pF ¾ 5 10 dB ¾1 2 1 2003-03-25 2SK184 2 2003-03-25 2SK184 3 2003-03-25 2SK184 RESTRICTIONS ON PRODUCT USE 000707EAA
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