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Power F-MOS FETs 2SK1846 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply s Absolute M.
q Avalanche energy capacity guaranteed: EAS > 20mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown
s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC Pulse
Avalanche energy capacity
VDSS VGSS ID IDP EAS
*
800 ±30 ±3 ±6 20
Allowable power dissipation
TC = 25°C Ta = 25°C PD
40 1.3
Channel temperature Storage temperature
T.
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|---|---|---|---|---|
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| 2 | 2SK1840 |
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| 3 | 2SK1841 |
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| 4 | 2SK1842 |
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| 5 | 2SK1847 |
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| 6 | 2SK1848 |
Sanyo Semicon Device |
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| 7 | 2SK1849 |
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| 8 | 2SK18 |
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| 9 | 2SK180 |
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| 10 | 2SK1803 |
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| 11 | 2SK1803 |
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| 12 | 2SK1805 |
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|