2SK1842 - Panasonic Semiconductor

2SK1842 Silicon N-Channel Junction FET

Silicon Junction FETs (Small Signal) 2SK1842 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 +0.25 s Features q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q Mini-type package, allowing downsizing of the sets and automa.

Features

q Low gate to source leakage current, IGSS q Small capacitance of Ciss, Coss, Crss q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.95 2.9
  –0.05 1 1.9±0.2 +0.2 0.95 3 0.4
  –0.05 +0.1 2 Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature VGSO ID IG PD Tj Tstg −40 1 10 150 150 −55 to +150 V mA mA mW °C °C 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol (Example): EB s Electrical Charact.