Ordering number:EN4636 N-Channel Enhancement Silicon MOSFET 2SK1841 Ultrahigh-Speed Switching, Analog Switch Applications Features · Largeyfs. · Enhancement type. · Low ON resistance. Package Dimensions unit:mm 2040A [2SK1841] 4.0 2.2 0.6 1.8 15.0 3.0 0.4 0.5 0.4 0.4 123 1.3 1.3 0.7 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parame.
· Largeyfs.
· Enhancement type.
· Low ON resistance.
Package Dimensions
unit:mm 2040A
[2SK1841]
4.0
2.2
0.6 1.8
15.0 3.0
0.4 0.5
0.4 0.4
123 1.3 1.3
0.7 0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Votlage Drain Current Gate-to-Source Leakage Current Cutoff Voltage .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK184 |
Toshiba Semiconductor |
N-Channel Silicon MOSFET | |
2 | 2SK1840 |
Sanyo Semicon Device |
N-Channel Enhancement Silicon MOSFET | |
3 | 2SK1842 |
Panasonic Semiconductor |
Silicon N-Channel Junction FET | |
4 | 2SK1846 |
Panasonic |
Silicon N-Channel Power F-MOS FET | |
5 | 2SK1847 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
6 | 2SK1848 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
7 | 2SK1849 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
8 | 2SK18 |
Toshiba |
Silicon N-Channel Transistor | |
9 | 2SK180 |
Yoshino International |
Power FET | |
10 | 2SK1803 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
11 | 2SK1803 |
Panasonic |
Silicon N-Channel MOSFET | |
12 | 2SK1805 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |