2SK1805 - Inchange Semiconductor

2SK1805 N-Channel MOSFET Transistor

·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Chopper regulator and motor drive ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage .

Features

oltage VGS= 0; ID= 10mA 500 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 4A 0.85 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 500V; VGS= 0 300 µA Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS=10V; VGS=0V; fT=1MHz 870 1100 75 140 pF 210 300 tr Rise Time ton Turn-on Time tf Fall Time VGS=10V; ID=4A; VDD=200V; RL=50Ω 60 120 ns 70 toff Turn-off Time 200 NOTICE： ISC reserves the rights to make changes o.