2SK1384 - Inchange Semiconductor

2SK1384 N-Channel MOSFET Transistor

·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage ±20 V ID Drain.

Features

Voltage VDS= VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2.5A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=800V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V;ID=2.5A; RL=50Ω VSD Diode Forward Voltage IF=5A; VGS=0 2SK1384 MIN TYP. MAX UNIT 800 V 2.1 3.0 4.0 V 1.5 2.0 Ω ±100 nA 500 uA 30 50 ns 420 630 ns 1.0 1.5 V Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a g.