2SK1302 - Hitachi Semiconductor

2SK1302 Silicon N-Channel MOSFET

2SK1302 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1302 Absolute Maximum Ra.

Features

• Low on-resistance
• High speed switching
• 4 V gate drive device  Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1302 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol V (BR)DSS VGSS ID I D(pulse)
* I DR Pch
* Tch Tstg 2 1.