2SK1384 |
Part Number | 2SK1384 |
Manufacturer | Inchange Semiconductor |
Description | ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power ... |
Features |
Voltage
VDS= VGS; ID=1mA
RDS(on) Drain-Source On-stage Resistance
VGS=10V; ID=2.5A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=800V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=2.5A; RL=50Ω
VSD
Diode Forward Voltage
IF=5A; VGS=0
2SK1384
MIN TYP. MAX UNIT
800
V
2.1
3.0
4.0
V
1.5 2.0
Ω
±100 nA
500 uA
30
50
ns
420 630
ns
1.0
1.5
V
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a g... |
Document |
2SK1384 Data Sheet
PDF 203.79KB |
Distributor | Stock | Price | Buy |
---|
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1380 |
Toshiba |
MOSFET | |
2 | 2SK1381 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1382 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1385 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK1386 |
Inchange Semiconductor |
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