2SK1300 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1300.
•
•
•
• Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1300
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)
* I DR Pc.
2SK1300 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed swit.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK1301 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
2 | 2SK1302 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1303 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1304 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
5 | 2SK1304 |
Renesas |
Silicon N-Channel MOSFET | |
6 | 2SK1305 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
7 | 2SK1305 |
Renesas |
Silicon N-Channel MOSFET | |
8 | 2SK1306 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
9 | 2SK1307 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET | |
10 | 2SK1310 |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | 2SK1310A |
Toshiba Semiconductor |
N-Channel MOSFET | |
12 | 2SK1313 |
Hitachi Semiconductor |
Silicon N-Channel MOSFET |