2SK1381 - Toshiba Semiconductor

2SK1381 Silicon N-Channel MOSFET

2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII) 2SK1381 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON-resistance : RDS (ON) = 25 mΩ (typ.) z High forward transfer admittance : |Yfs| = 33 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) z Enha.

Features

JEDEC ― JEITA SC-65 TOSHIBA 2-16C1B Weight: 4.6 g (typ.) cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel .