2SK1382 - Toshiba Semiconductor

2SK1382 Silicon N-Channel MOSFET

2SK1382 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII) 2SK1382 Relay Drive, Motor Drive and DC−DC Converter Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.) z High forward transfer admittance : |Yfs| = 47 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) z E.

Features

etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c).