Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Ordering number : EN8584 2SJ659 P-Channel Silicon MOSFET 2SJ659 Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Volta.
•
•
•
•
•
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse)
*1 Avalanche Current
*2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --14 --56 1.65 40 150 --55 to +150 85 --14 Un.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SJ650 |
Sanyo Semicon Device |
P-Channl Silicon MOSFET |
|
| 2 | 2SJ650 |
ON Semiconductor |
P-Channl Silicon MOSFET |
|
| 3 | 2SJ651 |
Sanyo Semicon Device |
P CHANNEL SILICON TRASISTOR |
|
| 4 | 2SJ652 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications |
|
| 5 | 2SJ653 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications |
|
| 6 | 2SJ654 |
Sanyo |
P-Channl Silicon MOSFET |
|
| 7 | 2SJ655 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 8 | 2SJ656 |
Sanyo Semicon Device |
General-Purpose Switching Device |
|
| 9 | 2SJ657 |
Sanyo Semicon Device |
General-Purpose Switching Device |
|
| 10 | 2SJ658 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 11 | 2SJ600 |
NEC |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
|
| 12 | 2SJ600 |
Kexin |
MOSFET |
|