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www.DataSheet4U.com Ordering number : ENN7626 2SJ653 P-Channl Silicon MOSFET 2SJ653 General-Purpose Switching Device Applications Features • • • • Package Dimensions unit : mm 2063A [2SJ653] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 2.4 0.7 2.5.
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Package Dimensions
unit : mm 2063A
[2SJ653]
10.0 3.2
3.5 7.2
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.
4.5 2.8
18.1
16.0
5.6
14.0
1.6 1.2 0.75
2.4 0.7
2.55
1 2 3 2.55
2.4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Ratings --60 ±20 --3.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SJ650 |
Sanyo Semicon Device |
P-Channl Silicon MOSFET |
|
| 2 | 2SJ650 |
ON Semiconductor |
P-Channl Silicon MOSFET |
|
| 3 | 2SJ651 |
Sanyo Semicon Device |
P CHANNEL SILICON TRASISTOR |
|
| 4 | 2SJ652 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications |
|
| 5 | 2SJ654 |
Sanyo |
P-Channl Silicon MOSFET |
|
| 6 | 2SJ655 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |
|
| 7 | 2SJ656 |
Sanyo Semicon Device |
General-Purpose Switching Device |
|
| 8 | 2SJ657 |
Sanyo Semicon Device |
General-Purpose Switching Device |
|
| 9 | 2SJ658 |
Sanyo Semicon Device |
High-Speed Switching Applications |
|
| 10 | 2SJ659 |
Sanyo |
P-Channel Silicon MOSFET |
|
| 11 | 2SJ600 |
NEC |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
|
| 12 | 2SJ600 |
Kexin |
MOSFET |
|