2SJ650 Ordering number : ENN7500 2SJ650 P-Channl Silicon MOSFET DC / DC Converter Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. Package Dimensions unit : mm 2063A 10.0 3.2 [2SJ650] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm 2063A
10.0 3.2
[2SJ650]
4.5
2.8
3.5 7.2 16.0
18.1 5.6
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6 1.2
0.75 123 2.55 2.55
2.55 2.55
2.4 14.0
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
VDSS VGSS
ID IDP
Allowable Power Dissipation
Channel Temperature Storage Temperature
PD
Tch Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW≤10µs, duty cycle≤1% Tc=25°C
Ratin.
Ordering number : ENN7500 Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2SJ650 P-Channl Silic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ651 |
Sanyo Semicon Device |
P CHANNEL SILICON TRASISTOR | |
2 | 2SJ652 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
3 | 2SJ653 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
4 | 2SJ654 |
Sanyo |
P-Channl Silicon MOSFET | |
5 | 2SJ655 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
6 | 2SJ656 |
Sanyo Semicon Device |
General-Purpose Switching Device | |
7 | 2SJ657 |
Sanyo Semicon Device |
General-Purpose Switching Device | |
8 | 2SJ658 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
9 | 2SJ659 |
Sanyo |
P-Channel Silicon MOSFET | |
10 | 2SJ600 |
NEC |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
11 | 2SJ600 |
Kexin |
MOSFET | |
12 | 2SJ601 |
NEC |
P-Channel Power MOSFET |