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2SJ659 |
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| Part Number | 2SJ659 |
| Manufacturer | Sanyo |
| Description | Ordering number : EN8584 2SJ659 P-Channel Silicon MOSFET 2SJ659 Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor driv... |
| Features |
• • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --14 --56 1.65 40 150 --55 to +150 85 --14 Un... |
| Document |
 2SJ659 Data Sheet
PDF 57.45KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SJ650 |
Sanyo Semicon Device |
P-Channl Silicon MOSFET |
|
| 2 | 2SJ650 |
ON Semiconductor |
P-Channl Silicon MOSFET |
|
| 3 | 2SJ651 |
Sanyo Semicon Device |
P CHANNEL SILICON TRASISTOR |
|
| 4 | 2SJ652 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications |
|
| 5 | 2SJ653 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications |
|