Ordering number : ENN7712 2SJ655 2SJ655 Features • • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Curre.
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P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --12 --48 2.0 25 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-S.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ650 |
Sanyo Semicon Device |
P-Channl Silicon MOSFET | |
2 | 2SJ650 |
ON Semiconductor |
P-Channl Silicon MOSFET | |
3 | 2SJ651 |
Sanyo Semicon Device |
P CHANNEL SILICON TRASISTOR | |
4 | 2SJ652 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
5 | 2SJ653 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
6 | 2SJ654 |
Sanyo |
P-Channl Silicon MOSFET | |
7 | 2SJ656 |
Sanyo Semicon Device |
General-Purpose Switching Device | |
8 | 2SJ657 |
Sanyo Semicon Device |
General-Purpose Switching Device | |
9 | 2SJ658 |
Sanyo Semicon Device |
High-Speed Switching Applications | |
10 | 2SJ659 |
Sanyo |
P-Channel Silicon MOSFET | |
11 | 2SJ600 |
NEC |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
12 | 2SJ600 |
Kexin |
MOSFET |