www.DataSheet4U.com Ordering number : ENN7552 2SJ658 P-Channel Silicon MOSFET 2SJ658 High-Speed Switching Applications Features • • • Package Dimensions unit : mm 2178 [2SJ658] 5.0 4.0 4.0 Low ON-resistance. High-speed switching. 2.5V drive. 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 1.3 SANYO : NP Specificat.
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Package Dimensions
unit : mm 2178
[2SJ658]
5.0 4.0 4.0
Low ON-resistance. High-speed switching. 2.5V drive.
0.45 0.5
0.6 2.0
5.0
0.45
0.44
1
2
3
14.0
1 : Source 2 : Drain 3 : Gate
1.3
1.3
SANYO : NP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -20 ±10 --2 --8 0.7 150 --55 to +150 Unit V V A A W °C °C
Electrical Characteristics .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ650 |
Sanyo Semicon Device |
P-Channl Silicon MOSFET | |
2 | 2SJ650 |
ON Semiconductor |
P-Channl Silicon MOSFET | |
3 | 2SJ651 |
Sanyo Semicon Device |
P CHANNEL SILICON TRASISTOR | |
4 | 2SJ652 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
5 | 2SJ653 |
Sanyo Semicon Device |
General-Purpose Switching Device Applications | |
6 | 2SJ654 |
Sanyo |
P-Channl Silicon MOSFET | |
7 | 2SJ655 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
8 | 2SJ656 |
Sanyo Semicon Device |
General-Purpose Switching Device | |
9 | 2SJ657 |
Sanyo Semicon Device |
General-Purpose Switching Device | |
10 | 2SJ659 |
Sanyo |
P-Channel Silicon MOSFET | |
11 | 2SJ600 |
NEC |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
12 | 2SJ600 |
Kexin |
MOSFET |