2SJ409(L), 2SJ409(S) Silicon P-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline LDPAK 4 4 1 2 1 D G 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SJ409(L), 2S.
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• Low on-resistance High speed switching Low drive current 4 V Gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter
Outline
LDPAK 4 4
1 2 1 D G 2 3
3
S
1. Gate 2. Drain 3. Source 4. Drain
2SJ409(L), 2SJ409(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)
* I DR Pch
* Tch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SJ409 |
Hitachi Semiconductor |
P-Channel MOSFET | |
2 | 2SJ409S |
Hitachi Semiconductor |
P-Channel MOSFET | |
3 | 2SJ400 |
Sanyo Semicon Device |
P-Channel MOSFET | |
4 | 2SJ401 |
Toshiba Semiconductor |
P-Channel MOSFET | |
5 | 2SJ402 |
Toshiba Semiconductor |
P-Channel MOSFET | |
6 | 2SJ406 |
Sanyo Semicon Device |
P-Channel MOSFET | |
7 | 2SJ407 |
Toshiba Semiconductor |
P-Channel MOSFET | |
8 | 2SJ410 |
Hitachi Semiconductor |
P-Channel MOSFET | |
9 | 2SJ411 |
NEC |
P-Channel MOSFET | |
10 | 2SJ412 |
Toshiba Semiconductor |
P-Channel MOSFET | |
11 | 2SJ413 |
Sanyo Semicon Device |
P-Channel MOSFET | |
12 | 2SJ416 |
Sanyo Semicon Device |
P-Channel MOSFET |